- 专利标题: BIDIRECTIONAL ASYMMETRIC TRANSIENT VOLTAGE SUPPRESSOR DEVICE
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申请号: EP23197020.3申请日: 2023-09-12
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公开(公告)号: EP4340045A1公开(公告)日: 2024-03-20
- 发明人: Rosensaft, Boris , Steinhoff, Stefan , Gu, Xingchong
- 申请人: Littelfuse Semiconductor (Wuxi) Co., Ltd.
- 申请人地址: CN Wuxi, Jiangsu 214142 3 Zhen Fa 6 Road Shuo Fang New District
- 代理机构: Arnold & Siedsma
- 优先权: CN202211129583 20220916
- 主分类号: H01L29/861
- IPC分类号: H01L29/861 ; H01L29/06 ; H01L21/329 ; H01L27/02
摘要:
A transient voltage suppression (TVS) device and method of formation. A TVS device may include a first layer, disposed on a first surface of a substrate, comprising a first P+ layer; a second layer, disposed on a second surface of the substrate, opposite the first surface, comprising a second P+ layer; a third layer, disposed between the first P+ layer and the second P+ layer, comprising an N- layer; and an isolation diffusion region, comprising a P structure, connected to the second P+ layer, and extending along a perimeter of the N- layer.
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