- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
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申请号： EP23154453.7申请日： 2023-02-01
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公开(公告)号： EP4343856A1公开(公告)日： 2024-03-27
- 发明人: ICHINOSEKI, Kentaro , KAWAMURA, Keiko , NISHIWAKI, Tatsuya , OASA, Kohei
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Minato-ku Tokyo 1-1, Shibaura 1-Chome,; JP Tokyo 105-8001 1-1, Shibaura 1-chome Minato-ku
- 代理机构： Kramer Barske Schmidtchen Patentanwälte PartG mbB
- 优先权： JP2022148731 20220920
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423 ; H01L21/336
摘要：
A semiconductor device (1, 2) includes a semiconductor part (10), first to third and control electrodes (20, 30, 50, 40). The first electrode (20) is provided on a back surface (10B) of the semiconductor part (10); and the second electrode (30) is provided on a front surface (10F) thereof. The third electrode (50) is provided between the first and second electrodes (20, 30). The third electrode (50) extends into the semiconductor part (10) from the front surface side (10F) thereof. The third electrode (50) is electrically insulated from the semiconductor part (10) via an insulating space (IS) between the semiconductor part (10) and the third electrode (50). The control electrode includes first and second portions (40A, 40B). The first portion (40A) is linked to the second portion (40B) and extends between the semiconductor part (10) and the third electrode (50). The second portion (40B) is provided between the second electrode (30) and the third electrode (50). The first portion (40A) faces the insulating space (IS) via the third electrode (50); and the second portion (40B) extends between the insulating space (IS) and the second electrode (30).
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