公开(公告)号：EP4432366A1

公开(公告)日：2024-09-18

申请号：EP23191261.9

申请日：2023-08-14

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： TOMITA, Kouta ,  NISHIWAKI, Tatsuya

IPC分类号： H01L29/417 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/7813 ,  H01L29/7806 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/1095

摘要： A semiconductor device according to one embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; an insulating film disposed in the first semiconductor region; a second electrode disposed in the insulating film; a second semiconductor region of a second conductivity type adjacent to the second electrode via the insulating film; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; and a third electrode that is in contact with the first semiconductor region to form a Schottky junction on a first side surface, is in contact with the second semiconductor region and the third semiconductor region on a second side surface opposite to the first side surface, includes a contact portion having a bottom surface located above a bottom surface of the second semiconductor region, and is electrically coupled to the contact portion.

公开(公告)号：EP4425566A1

公开(公告)日：2024-09-04

申请号：EP24158577.7

申请日：2024-02-20

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： TAKAGI, Shigeaki ,  YOSHIHASHI, Hideo ,  KURAGUCHI, Tomomi ,  HIRATA, Naofumi ,  ARAKAKI, Yohei

IPC分类号： H01L29/16 ,  H01L21/28 ,  H01L29/417 ,  H01L21/329 ,  H01L29/872 ,  H01L29/47 ,  H01L21/66 ,  H01L29/06

CPC分类号： H01L29/872 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/0619 ,  H01L29/6606 ,  H01L21/28 ,  H01L29/47 ,  H01L22/12

摘要： A semiconductor device according to an embodiment includes a first electrode, a second electrode, a silicon carbide layer provided between the first electrode and the second electrode and including a first silicon carbide region of n type, a titanium nitride layer provided between the first electrode and the first silicon carbide region, and an intermediate layer provided between the titanium nitride layer and the first silicon carbide region and containing silicon nitride.

公开(公告)号：EP4343856A1

公开(公告)日：2024-03-27

申请号：EP23154453.7

申请日：2023-02-01

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： ICHINOSEKI, Kentaro ,  KAWAMURA, Keiko ,  NISHIWAKI, Tatsuya ,  OASA, Kohei

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L21/336

摘要： A semiconductor device (1, 2) includes a semiconductor part (10), first to third and control electrodes (20, 30, 50, 40). The first electrode (20) is provided on a back surface (10B) of the semiconductor part (10); and the second electrode (30) is provided on a front surface (10F) thereof. The third electrode (50) is provided between the first and second electrodes (20, 30). The third electrode (50) extends into the semiconductor part (10) from the front surface side (10F) thereof. The third electrode (50) is electrically insulated from the semiconductor part (10) via an insulating space (IS) between the semiconductor part (10) and the third electrode (50). The control electrode includes first and second portions (40A, 40B). The first portion (40A) is linked to the second portion (40B) and extends between the semiconductor part (10) and the third electrode (50). The second portion (40B) is provided between the second electrode (30) and the third electrode (50). The first portion (40A) faces the insulating space (IS) via the third electrode (50); and the second portion (40B) extends between the insulating space (IS) and the second electrode (30).

公开(公告)号：EP4340037A1

公开(公告)日：2024-03-20

申请号：EP23154449.5

申请日：2023-02-01

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： ASABA, Shunsuke ,  KONO, Hiroshi

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L29/12 ,  H01L21/336

摘要： A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer located on a portion of the first semiconductor layer, a third semiconductor layer located on a portion of the second semiconductor layer, a second electrode connected to the third semiconductor layer, and a third electrode located in a region directly above at least a portion of the second semiconductor layer between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer faces the first semiconductor layer via the second semiconductor layer. A side surface of the third semiconductor layer facing the first semiconductor layer has a shape that approaches the first semiconductor layer upward. The third semiconductor layer is of a first conductivity type and includes silicon and carbon. The third electrode faces the portion via a first insulating film.

公开(公告)号：EP4246589A1

公开(公告)日：2023-09-20

申请号：EP22184007.7

申请日：2022-07-11

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： TANAKA, Katsuhisa ,  KONO, Hiroshi

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/78

摘要： According to one embodiment, a semiconductor device (100) includes first and second electrodes (21, 22), first to fifth semiconductor regions (1 to 5), and a gate electrode (10). The first semiconductor region is located on the first electrode. The first semiconductor region includes a first region (1a). The gate electrode is located on the first semiconductor region with a gate insulating layer (11) interposed. The second semiconductor region faces the gate electrode via the gate insulating layer (11) in a second direction perpendicular to a first direction. The third semiconductor region is located between the first and second semiconductor regions. A length in the second direction of a lower portion of the third semiconductor region is greater than a length in the second direction of an upper portion of the third semiconductor region. The fourth semiconductor region is located between the third semiconductor region and the gate electrode. The fifth semiconductor region is located on the second semiconductor region.

公开(公告)号：EP4246585A1

公开(公告)日：2023-09-20

申请号：EP22188249.1

申请日：2022-08-02

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： TANIHIRA, Kei ,  HORI, Yoichi ,  KONO, Hiroshi

IPC分类号： H01L29/06 ,  H01L29/872

摘要： A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a second electrode. The fourth semiconductor layer is located in a second region on the first semiconductor layer. The fourth semiconductor layer is separated from the second semiconductor layer with a portion of the first semiconductor layer interposed. An impurity concentration of the fourth semiconductor layer is greater than an impurity concentration of the first semiconductor layer and less than an impurity concentration of the second semiconductor layer.

公开(公告)号：EP4156280A1

公开(公告)日：2023-03-29

申请号：EP22158441.0

申请日：2022-02-24

申请人： Toshiba Electronic Devices & Storage Corporation ,  KABUSHIKI KAISHA TOSHIBA

发明人： ASABA, Shunsuke ,  KONO, Hiroshi ,  MIZUKAMI, Makoto

IPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/78

摘要： A semiconductor device of embodiments includes: a first silicon carbide region of first conductive type including a first region in contact with a first face of a silicon carbide layer having first and second faces; a second silicon carbide region of second conductive type above the first silicon carbide region; a third silicon carbide region of second conductive type above the second silicon carbide region; a fourth silicon carbide region of first conductive type above the second silicon carbide region; a first gate electrode and a second gate electrode extending in the first direction; a first electrode on the first face and including a first portion and a second portion between the first and the second gate electrode. The first portion contacts the third and the fourth silicon carbide region. The second portion provided in the first direction of the first portion and contacts with the first region.

公开(公告)号：EP4152378A1

公开(公告)日：2023-03-22

申请号：EP22158420.4

申请日：2022-02-24

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： YAMAMOTO, Yoko

IPC分类号： H01L23/495 ,  H01L23/49 ,  H01L23/31

摘要： A semiconductor device of embodiments includes: a die pad (12) including a first region (12a) and a second region (12b) surrounding the first region (12a) and thinner than the first region (12a); a semiconductor chip (10) including an upper electrode (10a), a lower electrode (10b), and a silicon carbide layer (10c) between the upper electrode (10a) and the lower electrode (10b) and provided on an inner side rather than the second region (12b) on a surface of the die pad (12); and a connection layer (16) for connecting the lower electrode (10) to the surface of the die pad (12).

公开(公告)号：EP4148999A1

公开(公告)日：2023-03-15

申请号：EP22159940.0

申请日：2022-03-03

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： Miyazaki, Koutaro

IPC分类号： H03K17/082 ,  H03K17/14

摘要： According to one approach, electronic circuitry includes: a detection circuit including a diode, a cathode side of the diode being connected to one end of a semiconductor switching element and an anode side of the diode being connected to a first node; a comparator circuit to compare a voltage of the first node and a threshold voltage and generate a first signal; a first filter connected between the first node and another end of the semiconductor switching element and to suppress the voltage of the first node in a first period based on a control signal indicating turn-on of the semiconductor switching element; and a control circuit configured to determine at least one of the threshold voltage or the first period based on the first signal.

公开(公告)号：EP4060751A1

公开(公告)日：2022-09-21

申请号：EP21191675.4

申请日：2021-08-17

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hirata, Naofumi ,  Kuraguchi, Tomomi ,  Ueki, Shinichi ,  Hori, Yoichi ,  Tanihira, Kei

IPC分类号： H01L29/872 ,  H01L29/47 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/78 ,  H01L29/36 ,  H01L29/24

摘要： A semiconductor device (1, 2, 3) includes a semiconductor part (10, 100, 200) including a first semiconductor layer (13) of a first conductivity type; a first electrode (20) provided on a back surface of the semiconductor part (10, 100, 200); and a second electrode (30) provided on a front surface of the semiconductor part (10, 100, 200). The second electrode (30) includes a barrier layer (31) and a metal layer (33, 37). The barrier layer (31) contacts the first semiconductor layer (13) and including vanadium or a vanadium compound as a major component. The metal layer (33, 37) is provided on the barrier layer (31).