- 专利标题： SIC-BASED ELECTRONIC DEVICE WITH MULTILAYER AND MULTIFUNCTIONAL PASSIVATION, AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
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申请号： EP23207872.5申请日： 2023-11-06
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公开(公告)号： EP4386829A3公开(公告)日： 2024-08-21
- 发明人: BELLOCCHI, Gabriele , RASCUNA', Simone , PUGLISI, Valeria
- 申请人： STMicroelectronics International N.V.
- 申请人地址： CH 1228 Plan-les-Ouates, Geneva Chemin du Champ des Filles 39
- 专利权人： STMicroelectronics International N.V.
- 当前专利权人： STMicroelectronics International N.V.
- 当前专利权人地址： CH 1228 Plan-les-Ouates, Geneva Chemin du Champ des Filles 39
- 代理机构： Studio Torta S.p.A.
- 优先权： IT 2200024396 2022.11.25
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L23/29 ; H01L23/00 ; H01L29/16 ; H01L29/872 ; H01L29/06
摘要：
Electronic device (50; 100; 110), comprising: a solid body (53, 58, 61) including a Silicon Carbide substrate, and further including an electrical terminal (58) of the electronic device on the substrate (53); a passivation layer (69) on the electrical terminal (58), of a first material; and a first adhesion improving layer (82; 102; 112) coupled to the passivation layer (69) and to the solid body (53), of a second material having predefined characteristics of adhesion to the first material, and configured to bond together the passivation layer (69) and the solid body (53).
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