• 专利标题: INTEGRATED CIRCUIT (IC) PACKAGE EMPLOYING ADDED METAL FOR EMBEDDED METAL TRACES IN ETS-BASED SUBSTRATE FOR REDUCED SIGNAL PATH IMPEDANCE, AND RELATED FABRICATION METHODS
  • 申请号: EP22786221.6
    申请日: 2022-08-23
  • 公开(公告)号: EP4406016A1
    公开(公告)日: 2024-07-31
  • 发明人: PATIL, AniketWE, Hong BokBUOT, Joan Rey Villarba
  • 申请人: QUALCOMM INCORPORATED
  • 申请人地址: US San Diego, California 92121-1714 ATTN: International IP Administration 5775 Morehouse Drive
  • 专利权人: QUALCOMM INCORPORATED
  • 当前专利权人: QUALCOMM INCORPORATED
  • 当前专利权人地址: US San Diego, California 92121-1714 ATTN: International IP Administration 5775 Morehouse Drive
  • 代理机构: Pritzlaff, Stefanie Lydia
  • 优先权: US 2117482718 2021.09.23
  • 国际申请: US2022075316 2022.08.23
  • 国际公布: WO2023049579 2023.03.30
  • 主分类号: H01L23/498
  • IPC分类号: H01L23/498 H01L23/538
INTEGRATED CIRCUIT (IC) PACKAGE EMPLOYING ADDED METAL FOR EMBEDDED METAL TRACES IN ETS-BASED SUBSTRATE FOR REDUCED SIGNAL PATH IMPEDANCE, AND RELATED FABRICATION METHODS
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