Invention Publication
- Patent Title: INTEGRATED CIRCUIT DEVICE
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Application No.: EP24154349.5Application Date: 2024-01-29
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Publication No.: EP4407669A1Publication Date: 2024-07-31
- Inventor: HWANG, Donghoon , HWANG, Inchan , KIM, Hyojin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- Agency: Marks & Clerk LLP
- Priority: KR 230011866 2023.01.30
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/8234 ; H01L23/528 ; H01L23/535 ; H01L29/423
Abstract:
An integrated circuit device is provided. The device includes: lower source/drain areas; lower contacts respectively on bottom surfaces of the lower source/drain areas; upper source/drain areas spaced apart from the lower source/drain areas in a vertical direction; upper contacts respectively on upper surfaces of the upper source/drain areas; and a first vertical conductive rail electrically connected to a first contact of the lower contacts and the upper contacts, the first vertical conductive rail extending in the vertical direction, and including a first portion having a first upper surface at a first vertical level and a second portion having a second upper surface at a second vertical level lower than the first vertical level. The second portion overlaps a first upper contact among the upper contacts in the vertical direction.
Information query
IPC分类: