Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 µm or less, Wa (10 to 20 mm) is 0.13 µm or less, and Wa (20 to 30 mm) is 0.20 µm or less.