- 专利标题: DUAL-RAIL MEMORY DEVICE WITH HIGH SPEED AND LOW POWER CONSUMPTION
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申请号: EP24163627.3申请日: 2024-03-14
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公开(公告)号: EP4432281A1公开(公告)日: 2024-09-18
- 发明人: LIAO, Weinan , HUANG, Jiann-Tseng
- 申请人: MediaTek Inc.
- 申请人地址: TW Hsin-Chu 300 No. 1, Dusing Rd. 1st Science-Based Industrial Park
- 专利权人: MediaTek Inc.
- 当前专利权人: MediaTek Inc.
- 当前专利权人地址: TW Hsin-Chu 300 No. 1, Dusing Rd. 1st Science-Based Industrial Park
- 代理机构: Haseltine Lake Kempner LLP
- 优先权: US 2363490536P 2023.03.16
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C7/10 ; G11C11/417
摘要:
The present invention provides a memory device including a memory array, an IO circuitry and a control circuit. The IO circuitry is configured to access the memory array. The control circuit is configured to generate at least a global IO signal to the IO circuitry, to control operations of the IO circuitry, wherein the IO circuitry is supplied by a first supply voltage, the control circuit is supplied by at least a second supply voltage different from the first supply voltage.
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