- 专利标题： THIN FILM-FORMING MATERIAL FOR USE IN ATOMIC LAYER DEPOSITION, THIN FILM, METHOD FOR PRODUCING THIN FILM, AND RUTHENIUM COMPOUND
-
申请号： EP22895461.6申请日： 2022-11-07
-
公开(公告)号： EP4434994A1公开(公告)日： 2024-09-25
- 发明人: FUKUSHIMA, Ryota , ENZU, Masaki , MITSUI, Chiaki , OKADA, Nana , HATASE, Masako
- 申请人： ADEKA CORPORATION
- 申请人地址： JP Arakawa-ku Tokyo 116-8554 2-35, Higashiogu 7-chome
- 专利权人： ADEKA CORPORATION
- 当前专利权人： ADEKA CORPORATION
- 当前专利权人地址： JP Arakawa-ku Tokyo 116-8554 2-35, Higashiogu 7-chome
- 代理机构： Müller-Boré & Partner Patentanwälte PartG mbB
- 优先权： JP 21188006 2021.11.18
- 国际申请： JP2022041315 2022.11.07
- 国际公布： WO2023090179 2023.05.25
- 主分类号： C07F15/00
- IPC分类号： C07F15/00 ; C23C16/18 ; H01L21/285
摘要：
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a ruthenium compound represented by the following general formula (1):
wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
信息查询
