公开(公告)号：EP3178808A1

公开(公告)日：2017-06-14

申请号：EP15829762.2

申请日：2015-07-16

申请人： Adeka Corporation

发明人： SAKURAI, Atsushi ,  HATASE, Masako ,  YOSHINO, Tomoharu ,  ENZU, Masaki

IPC分类号： C07C251/08 ,  C23C16/18 ,  H01L21/285 ,  C07F1/08 ,  C07F15/06

CPC分类号： C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/0818 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/285

摘要： The alkoxide compound of the present invention is characteristically represented by the following general formula (I) :

摘要翻译： 本发明的醇盐化合物的特征在于以下通式（I）：

公开(公告)号：EP3144293B1

公开(公告)日：2018-09-19

申请号：EP15793276.5

申请日：2015-04-08

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  SAKURAI, Atsushi ,  NISHIDA, Akihiro ,  OKABE, Makoto

IPC分类号： C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F1/08 ,  C23C16/455

CPC分类号： C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

摘要： This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：EP3144293A1

公开(公告)日：2017-03-22

申请号：EP15793276.5

申请日：2015-04-08

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  SAKURAI, Atsushi ,  NISHIDA, Akihiro ,  OKABE, Makoto

IPC分类号： C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F1/08

CPC分类号： C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

摘要： This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

摘要翻译： 本发明提供由以下通式（I）表示的铜化合物。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子数的直链或支链烷基; 这提供R 1和R 2为甲基，R 3表示直链或支链烷基具有2至5个碳原子数; 并且提供没有R.sup.1是甲基和R 2是乙基，R 3 darstellt甲基或一个直链或支链的烷基具有3至5，一种起始原料的碳原子数为形成本的薄膜 本发明包括通式（I）表示的铜化合物。 本发明可以提供具有低的熔点的铜化合物，可以以液体状态进行输送时，具有高的蒸气压，并且是容易蒸发，因此形成薄膜，该薄膜使用寻求铜化合物的起始原料 ，

公开(公告)号：EP4130335A1

公开(公告)日：2023-02-08

申请号：EP21781717.0

申请日：2021-03-18

申请人： ADEKA CORPORATION

发明人： TAKEDA, Keisuke ,  ENZU, Masaki

IPC分类号： C23C16/455 ,  C23C16/40 ,  H01L21/316

摘要： Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following formula (1):

where R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom;

where R 11 and R 12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1);

where R 21 to R 23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R 21 and R 22 represent different groups.

公开(公告)号：EP3266763B1

公开(公告)日：2020-01-01

申请号：EP16761428.8

申请日：2016-02-12

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  NISHIDA, Akihiro ,  SUGIURA, Nana ,  SAKURAI, Atsushi ,  OKABE, Makoto

IPC分类号： C07C251/08 ,  C23C16/18 ,  C07F15/06 ,  C23C16/455

公开(公告)号：EP3505511A1

公开(公告)日：2019-07-03

申请号：EP17845881.6

申请日：2017-07-05

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  NISHIDA, Akihiro ,  YAMASHITA, Atsushi

IPC分类号： C07C251/08 ,  C23C16/18 ,  C07F15/04

摘要： A diazadienyl compound represented by General Formula (I) below:

wherein R 1 represents a C 1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R 1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

公开(公告)号：EP4434994A1

公开(公告)日：2024-09-25

申请号：EP22895461.6

申请日：2022-11-07

申请人： ADEKA CORPORATION

发明人： FUKUSHIMA, Ryota ,  ENZU, Masaki ,  MITSUI, Chiaki ,  OKADA, Nana ,  HATASE, Masako

IPC分类号： C07F15/00 ,  C23C16/18 ,  H01L21/285

CPC分类号： C23C16/18 ,  C07F15/00 ,  H01L21/285

摘要： Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a ruthenium compound represented by the following general formula (1):

wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

公开(公告)号：EP3144313A1

公开(公告)日：2017-03-22

申请号：EP15792769.0

申请日：2015-03-31

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  SAKURAI, Atsushi ,  HATASE, Masako ,  UCHIUZOU, Hiroyuki ,  NISHIDA, Akihiro

IPC分类号： C07F15/06 ,  C23C16/18 ,  H01L21/316

CPC分类号： C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

摘要： The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R 1 to R 3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

摘要翻译： 本发明的钴化合物是由下面通式（I）表示。 在通式（I）中，R 1至R 3各自独立地表示直链或具有1至5个碳原子支链的烷基。 此外，本发明的薄膜形成用原料中含有由通式（I）表示的钴化合物。 。根据本发明，能够提供一种能够以液体的形式，由于具有低的熔点，这可以在低的温度下分解并可以很容易地汽化被运送钴化合物由于具有高的 蒸气压; 和薄膜形成用原料这样做使用钴化合物。

公开(公告)号：EP3135664A1

公开(公告)日：2017-03-01

申请号：EP15782391.5

申请日：2015-03-30

申请人： Adeka Corporation

发明人： SAKURAI, Atsushi ,  HATASE, Masako ,  YOSHINO, Tomoharu ,  ENZU, Masaki

IPC分类号： C07C251/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F15/06

CPC分类号： C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

摘要： An alkoxide compound is represented by General Formula (I) below:

wherein R 1 to R 3 each independently represent hydrogen, a C 1-12 hydrocarbon group, etc.; R 4 represents a C 1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C 1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n + m represents the valence of the metal atom or silicon atom.

摘要翻译： 。醇盐化合物由以下通式（I）表示：其中R 1至R 3各自独立地表示氢，C 1-12烃基等; R 4表示C 1-12烃基等; 大号darstellt氢，卤素，羟基，成氨基，以阿紫基，膦基，腈基，羰基，C 1-12烃基等; 和M darstellt金属原子或硅原子，n darstellt为1或更大，米darstellt的整数的0以上的整数，并且n + m darstellt金属原子或硅原子的价数。

公开(公告)号：EP4130010A1

公开(公告)日：2023-02-08

申请号：EP21778924.7

申请日：2021-03-18

申请人： ADEKA CORPORATION

发明人： FUKUSHIMA, Ryota ,  TAKEDA, Keisuke ,  ENZU, Masaki

IPC分类号： C07F3/06 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455

摘要： Provided is a zinc compound represented by the following general formula (1) or (2):

in the formula (1), R 1 represents an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., R 2 and R 5 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R 3 and R 4 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.;

in the formula (2), R 10 , R 11 , R 14 , and R 15 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R 9 , R 12 , R 13 , and R 16 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.