Invention Patent
- Patent Title: Method of manufacturing semiconductor device and method of processing electric connection
- Patent Title (中): 制造半导体器件的方法和处理电连接的方法
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Application No.: JP2005011763Application Date: 2005-01-19
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Publication No.: JP2006202905APublication Date: 2006-08-03
- Inventor: NAKAYAMA HIROHISA , SATO SHIRO , SHOJI MASANORI , NOSAKA HITOSHI
- Applicant: Seiko Epson Corp , セイコーエプソン株式会社
- Assignee: Seiko Epson Corp,セイコーエプソン株式会社
- Current Assignee: Seiko Epson Corp,セイコーエプソン株式会社
- Priority: JP2005011763 2005-01-19
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L21/60
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which reliability of an external terminal can be improved, and a method of processing an electric connection. SOLUTION: The method of manufacturing a semiconductor device 40 includes a step of providing a paste containing acid on the electric connection 14 electrically conducting with a semiconductor substrate 20, eliminating the paste from the electric connection 14 by washing the electric connection 14, and providing a conductive member 60 on the connection 14. COPYRIGHT: (C)2006,JPO&NCIPI
Public/Granted literature
- JP4035733B2 Processing method preparation and electrical connection section of the semiconductor device Public/Granted day:2008-01-23
Information query
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