Invention Patent
- Patent Title: METHOD FOR FORMING THIN FILM OF Sn-Ag-Cu TERNARY ALLOY
- Patent Title (中): 形成Sn-Ag-Cu三元合金薄膜的方法
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Application No.: JP2005030837Application Date: 2005-02-07
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Publication No.: JP2006213996APublication Date: 2006-08-17
- Inventor: MIURA SHIGENORI
- Applicant: Fcm Kk , Fcm株式会社
- Assignee: Fcm Kk,Fcm株式会社
- Current Assignee: Fcm Kk,Fcm株式会社
- Priority: JP2005030837 2005-02-07
- Main IPC: C25D7/00
- IPC: C25D7/00 ; C25D3/60
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming such a thin film of an Sn alloy as to have whisker formation resistance balanced with adequate solderability (low melting point), and have a small and uniform thickness without causing inconvenience such as abrasion due to imperceptible sliding. SOLUTION: The method for forming the thin film of the Sn-Ag-Cu ternary alloy on a substrate comprises immersing the substrate in a plating bath and forming the thin film of the Sn-Ag-Cu ternary alloy on the whole area or a part of the substrate by electroplating, wherein the plating bath includes at least an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent, wherein the inorganic chelating agent is blended at a ratio of 1 pts.mass to 300 pts.mass with respect to the Ag compound of 1 pts.mass; and the organic chelating agent is blended at a ratio of 1 pts.mass to 200 pts.mass with respect to the Cu compound of 1 pts.mass. COPYRIGHT: (C)2006,JPO&NCIPI
Public/Granted literature
- JP3741709B1 A method of forming a Sn-Ag-Cu ternary alloy thin film Public/Granted day:2006-02-01
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