发明专利
JP2014103411A Manufacturing method of line device 审中-公开
线装置的制造方法

Manufacturing method of line device
摘要:
PROBLEM TO BE SOLVED: To provide a manufacturing process of a line device structure, which relieves stress and makes interval distance of a contact window structure small, and to provide the structure.SOLUTION: A line device structure comprises a substrate, a first metal pole 68 and a second metal pole. The first metal pole 68 is positioned on the substrate. When maximum side dimension Hw of the first metal pole 68 is divided by height Ht of the first metal pole 68, a quotient is smaller than four. The height of the first metal pole 68 is 20 μm to 300 μm. The second metal pole is positioned on the substrate. When maximum side dimension of the second metal pole is divided by height of the second metal pole, a quotient is smaller than four. Distance Hb from a center point of the first metal pole to a center point of the second metal pole is 10 μm to 250 μm.
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信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/28)
H01L21/31 .....在半导体材料上形成绝缘层的,例如用于掩膜的或应用光刻技术的(密封层入H01L21/56);以及这些层的后处理;这些层的材料的选择
H01L21/3205 ......非绝缘层的沉积,例如绝缘层上的导电层或电阻层;这些层的后处理(电极的制造入H01L21/28)
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