发明专利
- 专利标题: Slicing method of semiconductor single crystal ingot
- 专利标题(中): 半导体单晶晶体的切割方法
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申请号: JP2013071236申请日: 2013-03-29
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公开(公告)号: JP2014195025A公开(公告)日: 2014-10-09
- 发明人: NOGUCHI HIROSHI
- 申请人: Sumco Techxiv株式会社 , Sumco Techxiv Corp
- 专利权人: Sumco Techxiv株式会社,Sumco Techxiv Corp
- 当前专利权人: Sumco Techxiv株式会社,Sumco Techxiv Corp
- 优先权: JP2013071236 2013-03-29
- 主分类号: H01L21/304
- IPC分类号: H01L21/304 ; B24B27/06
摘要:
PROBLEM TO BE SOLVED: To precisely control a deflection amount of a wafer to a wanted amount as well as reduce the deflection amount of the wafer.SOLUTION: A slicing method of a semiconductor single crystal ingot 13 is improved, in which a cylindrical semiconductor single crystal ingot 13 is bonded and held by a holding jig 14 while it is rotated by a predetermined rotation angle around a crystal axis 13b of the ingot 13 which is different from a central axis 13a of the cylinder of the ingot 13, and in this condition, the ingot 13 is sliced by a cutting device 16. The configuration is featured by determining a predetermined rotational angle when the ingot 13 is bonded and held by the holding jig 14 such that a deflection amount of the wafer having been sliced by the cutting device 16 becomes a predetermined amount.
公开/授权文献
- JP6132621B2 半導体単結晶インゴットのスライス方法 公开/授权日:2017-05-24
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