公开(公告)号：JP2014195025A

公开(公告)日：2014-10-09

申请号：JP2013071236

申请日：2013-03-29

申请人： Sumco Techxiv株式会社 ,  Sumco Techxiv Corp

发明人： NOGUCHI HIROSHI

IPC分类号： H01L21/304 ,  B24B27/06

CPC分类号： H01L29/0657 ,  B23D57/0023 ,  B23D57/0046 ,  B23D61/18 ,  B28D1/08 ,  B28D5/0088 ,  B28D5/042 ,  B28D5/045 ,  Y10T428/21

摘要： PROBLEM TO BE SOLVED: To precisely control a deflection amount of a wafer to a wanted amount as well as reduce the deflection amount of the wafer.SOLUTION: A slicing method of a semiconductor single crystal ingot 13 is improved, in which a cylindrical semiconductor single crystal ingot 13 is bonded and held by a holding jig 14 while it is rotated by a predetermined rotation angle around a crystal axis 13b of the ingot 13 which is different from a central axis 13a of the cylinder of the ingot 13, and in this condition, the ingot 13 is sliced by a cutting device 16. The configuration is featured by determining a predetermined rotational angle when the ingot 13 is bonded and held by the holding jig 14 such that a deflection amount of the wafer having been sliced by the cutting device 16 becomes a predetermined amount.

摘要翻译： 要解决的问题：将晶片的偏转量精确地控制到期望的量以及减小晶片的偏转量。解决方案：改进半导体单晶锭13的切片方法，其中圆柱形半导体单晶 晶锭13由保持夹具14接合并保持，同时围绕与锭13的圆筒的中心轴线13a不同的锭13的晶轴13b旋转预定的旋转角度，在该条件下 通过切割装置16对锭13切片。该结构的特征在于，当锭13被保持夹具14接合并保持时，通过确定切割装置切片的晶片的偏转量来确定预定的旋转角度 16变为预定量。

公开(公告)号：JP2007103857A

公开(公告)日：2007-04-19

申请号：JP2005295031

申请日：2005-10-07

申请人： Sumco Techxiv株式会社 ,  Sumco Techxiv Corp

发明人： KAWANO SHIGERU ,  TAJIRI TOMOAKI ,  NOGUCHI HIROSHI

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/304

摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method in which variance in thickness in a plane of a diffused wafer is eliminated while the manufacturing cost of the diffused wafer is suppressed and roughness of a beveled part is reducible without causing cracking. SOLUTION: The diffused wafer having been beveled in a beveling stage has one surface 21a etched in sheet form in a sheet one-surface etching stage, by uniformly supplying an etchant 32 to respective parts of the surface 21a of a non-diffused layer of the diffused wafer. In the sheet one-surface etching stage, a spin etching device 30 is used to spin-etch the diffused wafer. In the sheet one-surface etching stage, a spin etching device 30 is used to discharge gas (air) 31 toward the reverse surface 21b of the diffused wafer, and the gas (air) 31 is so controlled that the etchant 32 dripped on the surface 21a of the diffused wafer penetrates a beveled part 23 of the reverse surface 21b. COPYRIGHT: (C)2007,JPO&INPIT

摘要翻译： 要解决的问题：提供一种制造方法，其中消除扩散晶片的平面中的厚度变化，同时抑制扩散晶片的制造成本，并且可以在不引起开裂的情况下减少斜面部分的粗糙度。 解决方案：在斜切台中已经被斜切的扩散晶片在片状单表面蚀刻阶段中以片状形式蚀刻了一个表面21a，通过均匀地将蚀刻剂32均匀地供应到非扩散的表面21a的各个部分 扩散晶片的层。 在片材单面蚀刻阶段中，使用旋转蚀刻装置30来旋转蚀刻扩散的晶片。 在片材一表面蚀刻阶段中，使用旋转蚀刻装置30朝向扩散晶片的反面21b排出气体（空气）31，并且控制气体（空气）31，使得蚀刻剂32滴在 扩散晶片的表面21a穿过反面21b的斜面部分23。 版权所有（C）2007，JPO＆INPIT