A semiconductor device having an electrode structure suitable for miniaturization. A semiconductor device of the embodiment includes a first semiconductor circuit layer having a first conductive layer, a second semiconductor circuit layer having a second conductive layer, a first semiconductor circuit layer and the second It provided between the semiconductor circuit layer, and a third conductive layer in contact with the first conductive layer, a fourth conductive layer in contact with the second conductive layer, the third conductive layer and the fourth conductive layer and a third semiconductor circuit layer and a fifth conductive layer in contact with the electrically connecting the third conductive layer bets, the width of the fifth conductive layer, than the width of the third conductive layer narrow. .FIELD 1