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发明授权
KR101920165B1 레지스트 재료 및 패턴 형성 방법 有权

레지스트 재료 및 패턴 형성 방법
摘要：
본발명은, 증감효과가높고, 산확산을억제하는효과도가지며, 해상성, LWR, CDU가양호한레지스트재료및 이것을이용하는패턴형성방법을제공하는것을목적으로한다. 상기과제는, 베이스폴리머와, 요오드화방향족기를갖는카르복실산의, 2,5,8,9-테트라아자-1-포스파비시클로[3.3.3]운데칸염, 비구아니드염 또는포스파젠염을포함하는레지스트재료에의해해결된다.
摘要（英）：

The present invention, a high sensitization effect, has an effect of inhibiting acid diffusion, and an object thereof is to provide a resolution, LWR, CDU is good resist materials and pattern forming method using them.
The challenge is, the base polymer, of carboxylic acid having an aromatic iodide, 2,5,8,9- tetraaza-1-phosphonic Fabien bicyclo [3.3.3] undecane salts, biguanide salts or phosphazene salt It is solved by a resist material comprising a.

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