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KR101923972B1 트랜지스터 및 그 제조 방법 有权

트랜지스터 및 그 제조 방법
摘要：
전계효과트랜지스터가제공된다. 이트랜지스터는기판상에순차적으로적층된활성층및 캡핑층, 캡핑층상에서로이격되어배치된소스오믹전극및 드레인오믹전극, 및소스오믹전극과드레인오믹전극사이의기판상에배치되되, 캡핑층을관통하여활성층에연결된게이트전극을포함한다. 게이트전극은활성층에연결된좁은폭을갖는다리부및 다리부보다넓은폭을갖는다리부상의머리부로구성된다. 게이트전극이연장되는방향의게이트전극의양 말단부위들의게이트전극의다리부는나머지부위의게이트전극의머리부보다좁고, 그리고다리부보다넓은폭을갖는다.
摘要（英）：

The field effect transistor is provided. The transistor doedoe disposed on the substrate between the spaced apart from each other on which are sequentially stacked in the active layer and a capping layer, the capping layer on a substrate disposed source ohmic electrode and a drain ohmic electrode, and a source ohmic electrode and a drain ohmic electrode, a capping layer through a includes a gate electrode connected to the active layer. The gate electrode is configured on the head parts of the leg portions having a width wider than the leg portion and the leg portion having a narrow width is connected to the active layer. The gate electrodes of both legs of the gate electrode terminal region of the gate electrode of the direction in which the extending portion narrower than the head portion of the gate electrode of the other part, and has a width wider than the leg portion.

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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/778 .....带有二维载流子气沟道的，如HEMT
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