发明公开
- 专利标题： 레지스트 패턴 형성 방법
- 专利标题（英）： Radiation-sensitive resin composition for forming resist pattern
- 专利标题（中）： 用于形成电阻图案的辐射敏感性树脂组合物
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申请号： KR1020120084656申请日： 2012-08-02
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公开(公告)号： KR1020120098566A公开(公告)日： 2012-09-05
- 发明人: 사카키바라,히로카즈 , 미야타,히로무 , 이토,고지 , 후루카와,다이이치
- 申请人： 제이에스알 가부시끼가이샤
- 申请人地址： *-*-*, Higashi-Shinbashi, Minato-ku, Tokyo, Japan
- 专利权人： 제이에스알 가부시끼가이샤
- 当前专利权人： 제이에스알 가부시끼가이샤
- 当前专利权人地址： *-*-*, Higashi-Shinbashi, Minato-ku, Tokyo, Japan
- 代理商 장수길; 김성완; 이석재
- 优先权： JPJP-P-2011-023374 2011-02-04; JPJP-P-2011-186429 2011-08-29; JPJP-P-2011-202133 2011-09-15
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/038
摘要：
PURPOSE: A radiation-sensitive resin composition for forming resist patterns is provided to improve exposure latitude, depth of focus, critical dimension uniformity, and mask error enhancement factor. CONSTITUTION: A radiation-sensitive resin composition for forming resist patterns includes a polymer with an acid-labile group and a radiation-sensitive acid generator. The radiation-sensitive resin composition uses a developer with 80 mass% or more of an organic solvent. If the organic solvent is used for a developing process, contrast value γ from a resist sensitive curve is in a range between 5.0 and 30.0. The organic solvent is at least one selected from a group including a C3-7 carboxylic alkyl ether and a C3-10 dialkyl ketone. The polymer with the acid-labile group includes a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2.
公开/授权文献
- KR101774060B1 레지스트 패턴 형성 방법 公开/授权日：2017-09-01
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