本发明是一种半导体装置，包括半导体器件金属焊盘和与半导体器件电连接的金属互连件，每个电连接到金属互连的通孔电极和焊料凸块，第一绝缘体 形成在半导体器件上的第二绝缘层，形成在第二绝缘层上的第三绝缘层，其中金属互连通过半导体器件金属焊盘电连接到半导体器件 在第二绝缘层的上表面从其上表面穿透第二绝缘层，并且在第二绝缘层的下表面与通孔电连接，并且在半导体器件之间的金属互连布置在 第一绝缘层和半导体器件，以及半导体 - 器件金属互连电连接到第二绝缘层的下表面处的金属互连。 该半导体装置可以容易地放置在电路板上并堆叠，并且即使使用致密的金属互连也可以减少其翘曲。

The present invention, a semiconductor element, having an electrical semiconductor element on the metal pad and the metal wiring connected to the semiconductor element, a semiconductor device in which a metal wiring is electrically connected to the through-electrode and the solder bump, a semiconductor element mounted first a second insulating layer, and a second insulation having a third insulation layer formed on the layer, and the semiconductor element via the semiconductor element onto the metal pad metal wire is, in the top surface of the second insulating layer formed on the insulating layer, and a semiconductor element a is electrically connected to the second insulation will penetrate the second insulating layer from the upper surface of the layer electrically connected to the through-hole in the lower face of the second insulating layer, the first insulating layer and the semiconductor element between the semiconductor element and the metal wire this is the arrangement and the semiconductor element and metal wiring, connected at the lower face of the second insulating layer of a metal wire and the electrical semiconductor device. Thus, the easy stacking of the mounting and the semiconductor device to the circuit board, and is provided with a semiconductor device of the warpage is suppressed even when the semiconductor device, the density of the metal wiring is large.