可用于电子束和极紫外光刻的嵌段共聚物包括具有衍生自碱溶性增强单体和带外吸收单体的单元的第一嵌段和具有低表面能的第二嵌段。 来自禁止吸收单体的重复单元使共聚物在150至400纳米的波长范围内显着吸收。 当用光致抗蚀剂无规聚合物掺入光致抗蚀剂组合物时，嵌段共聚物自分离以形成有效屏蔽带外辐射的顶层。

In the electron beam and EUV photolithography useful block copolymer is a base - a second block having a first block, and the low surface energy of the units derived from other monomers, and improved absorption band monomer-solubility. The repeating units derived from an out-of-band absorbing monomer, said copolymer is to significantly absorb in the wavelength range of 150 to 400 nanometers. When incorporated into a photoresist composition having a photoresist random polymers, wherein the block copolymer self-separate to form a top layer to effectively block the out-of-band radiation.