In an embodiment of the present invention, the steps of forming a first conductivity type semiconductor layer, and forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer And, forming a second conductivity type semiconductor layer on the active layer, wherein the plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer, and the second And at least one second quantum barrier layer adjacent to the conductive semiconductor layer, and the forming of the active layer includes: growing the at least one first quantum barrier layer at a first temperature, and the at least one second quantum barrier layer 2 It is possible to provide a method of manufacturing a semiconductor light emitting device comprising the step of growing the quantum barrier layer to a second temperature lower than the first temperature.