本发明系关于一种半导体设备之制造方法,该方法包括;a)制备一类型的ASIC芯片;b)制备彼此不同的内存芯片;c)制备一共同电路基板;d)制备包括具有内存芯片端子及外部连接端子之布线图案的基座端子芯片;e)借由覆晶结合将ASIC芯片安装于共同电路基板上;f)将基座端子芯片紧固于ASIC芯片上;g)将其中一个内存芯片安装于基座端子芯片上;h)使用第一导线将位于该其中一个内存芯片上之端子电连接至内存芯片端子;及i)使用第二导线将外部连接端子电连接至位于共同电路基板上之端子。

In a method of manufacturing a semiconductor device, the method include: (a) preparing one type of an ASIC chip; (b) preparing memory chips which are different from each other; (c) preparing a common circuit substrate; (d) preparing a pedestal terminal chip including wiring patterns having memory chip terminals and external connection terminals; (e) mounting the ASIC chip on the common circuit substrate by flip-chip bonding; (f) securing the pedestal terminal chip on the ASIC chip; (g) mounting one of the memory chips on the pedestal terminal chip; (h) electrically connecting terminals on the one of the memory chips to the memory chip terminals using a first wire; and (i) electrically connecting the external connection terminals to terminals on the common circuit substrate using a second wire.