一种用以在半导体基板上形成金属膜的组成物及方法。所揭示方法之一包含:加热该半导体基板以获得一经加热的半导体基板;暴露该经加热的半导体基板至包含至少一金属前驱物的一组成物,该金属前驱物包含至少一配位子、一过量的中性不稳定配位子、一超临界溶剂、以及可选择地B、C、N、Si、P与其混合物其中至少一者的来源;在该经加热的半导体基板处或接近该经加热的半导体基板处,暴露该组成物至一还原剂及/或热能;分离该至少一配位子与该金属前驱物;及形成该金属膜,但令金属氧化物的形成极小化。

Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.