本发明提供一种半导体设备及其制造方法，该半导体设备系于将半导体芯片埋入配线基板内部，且覆晶连接形成于半导体芯片表面之凸块电极与形成于配线基板内部之配线之情形时，使半导体芯片之整个背面充分起作用作为背面电极。将半导体芯片CHP1埋入配线基板内部而进行安装。此时，半导体芯片CHP1系借由凸块电极BP而与形成配线基板之内核层的基底基板20进行覆晶(面朝下)连接。于半导体芯片CHP1之与凸块电极形成面相反侧的面上形成有导体膜11。导体膜11起作用作为向形成于半导体芯片CHP1内部之集成电路供给基准电位之背面电极，该导体膜11经由信道V而与第3层配线L3电性连接。

A semiconductor device in which a chip is embedded in a wiring board and bump electrodes formed over the front surface of the semiconductor chip are flip-chip coupled to wiring formed in the wiring board and the entire back surface of the semiconductor chip functions well as a back electrode and a method of manufacturing the semiconductor device. A semiconductor chip is embedded inside a wiring board. The semiconductor chip is flip-chip coupled (face down) to a base substrate as the core layer of the wiring board through bump electrodes. A conductive film is formed over the semiconductor chip's surface reverse to the surface over which bump electrodes are formed. The conductive film functions as a back electrode which supplies a reference voltage to the integrated circuit in the semiconductor chip. The conductive film is electrically coupled to third-layer wiring through vias.