形成键结半导体结构之方法包括提供一底材结构，其在相对较厚之一底材本体上包含相对较薄之一材料层，以及形成穿透该材料层之多个穿透晶圆互连。一第一半导体结构可以键结至该材料薄层上，且该第一半导体结构中至少一个导电部件可以在电性上与该些穿透晶圆互连其中至少一个耦合。在该第一半导体结构相反于该第一底材结构之一面，一转移材料层可以提供于该第一半导体结构上方，且可以在该转移材料层中形成电性互连、光学互连及流体互连其中至少一种。在该转移材料层相反于该第一半导体结构之一面，一第二半导体结构可以提供于该转移材料层上方。应用此等方法制作之键结半导体结构。

Methods of forming bonded semiconductor structures include providing a substrate structure including a relatively thinner layer of material on a thicker substrate body, and forming a plurality of through wafer interconnects through the layer of material. A first semiconductor structure may be bonded over the thin layer of material, and at least one conductive feature of the first semiconductor structure may be electrically coupled with at least one of the through wafer interconnects. A transferred layer of material may be provided over the first semiconductor structure on a side thereof opposite the first substrate structure, and at least one of an electrical interconnect, an optical interconnect, and a fluidic interconnect may be formed in the transferred layer of material. A second semiconductor structure may be provided over the transferred layer of material on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are fabricated using such methods.