一种化合物半导体多层结构系形成在一Si基材上。该化合物半导体多层结构包括一电极传输层，一形成在该电子传输层上方之电子供应层，及一形成在该电子供应层上方之盖层。该盖层包含一以与该电子传输层与该电子供应层相同之方向极化之第一结晶，及一以与该电子传输层及该电子供应层之极化方向相反之方向极化之第二结晶。

A compound semiconductor multilayer structure is formed on a Si substrate. The compound semiconductor multilayer structure includes an electrode transit layer, an electrode donor layer formed above the electron transit layer, and a cap layer formed above the electron donor layer. The cap layer contains a first crystal polarized in the same direction as the electron transit layer and the electron donor layer and a second crystal polarized in the direction opposite to the polarization direction of the electron transit layer and the electron donor layer.