本发明揭示一种半导体晶粒总成，其包括在一堆栈中之复数个半导体晶粒。另一半导体晶粒邻近该堆栈并且具有一区域，该区域可包括周边延伸越出该堆栈的一相对较高功率密度区域。传导组件在该堆栈中之半导体晶粒与该另一半导体晶粒之间延伸并且电互连该堆栈中之半导体晶粒及该另一半导体晶粒的集成电路。热能柱插入于该堆栈之半导体晶粒之间，并且诸如一盖之一热量耗散结构与该堆栈之一最上晶粒及该另一半导体晶粒之该高功率密度区域接触。亦揭示其他晶粒总成、半导体设备及管理一半导体晶粒总成内之热量发送的方法。

A semiconductor die assembly comprises a plurality of semiconductor dice in a stack. Another semiconductor die is adjacent to the stack and has a region, which may comprise a relatively higher power density region, extends peripherally beyond the stack. Conductive elements extend between and electrically interconnect integrated circuits of semiconductor dice in the stack and of the other semiconductor die. Thermal pillars are interposed between semiconductor dice of the stack, and a heat dissipation structure, such as a lid, is in contact with an uppermost die of the stack and the high power density region of the other semiconductor die. Other die assemblies, semiconductor devices and methods of managing heat transfer within a semiconductor die assembly are also disclosed.