本发明提供一种具备有半导体结晶层之复合基板的制造方法，其系：在半导体结晶层形成基板的上方依序形成牺牲层及半导体结晶层，以蚀刻至使牺牲层的一部分露出之方式蚀刻半导体结晶层，将半导体结晶层分割为复数个分割体，使形成于半导体结晶层形成基板之层的表面(第一表面)、与由无机物所构成之转印目的地基板或形成于转印目的地基板之层的表面(第二表面)相对合，以使第一表面与第二表面相接之方式使半导体结晶层形成基板与转印目的地基板相贴合，再以0.01Mpa至1Gpa之压力范围将半导体结晶层形成基板及转印目的地基板予以压接，然后将牺牲层蚀刻掉，使转印目的地基板与半导体结晶层形成基板在半导体结晶层残留在转印目的地基板侧之状态下相分离。

The present invention provides a method for manufacturing a composite substrate having a semiconductor crystallizing layer, including: forming sequentially a sacrificial layer and a semiconductor crystallizing layer over an upper side of a semiconductor crystallizing layer forming substrate, etching the semiconductor crystallizing layer until a part of the sacrificial layer is exposed, dividing the semiconductor crystallizing layer into a plurality of divided bodies, arranging a first surface which is a surface of a layer formed on the semiconductor crystallizing layer forming substrate and a second surface which is a surface of a transfer destination substrate made of an inorganic material or a layer formed on the transfer destination substrate face to face, bonding the transfer destination substrate with the semiconductor crystallizing layer forming substrate by making the second surface be in contact with the first surface, pressing the transfer destination substrate on the semiconductor crystallizing layer forming substrate at a pressure range of 0.01Mpa to 1Gpa, etching the sacrificial layer, and separating the transfer destination substrate from the semiconductor crystallizing layer forming substrate with the semiconductor crystallizing layer being remained at the transfer destination substrate side.