本发明系提供一种半导体基板，其系于半导体结晶层形成基板上，依序具有第1半导体结晶层、第2半导体结晶层及第3半导体结晶层；第1半导体结晶层之由第1蚀刻剂所蚀刻之蚀刻速度及第3半导体结晶层之由第1蚀刻剂所蚀刻之蚀刻速度，均较第2半导体结晶层之由第1蚀刻剂所蚀刻之蚀刻速度更大，而第1半导体结晶层之由第2蚀刻剂所蚀刻之蚀刻速度及第3半导体结晶层之由第2蚀刻剂所蚀刻之蚀刻速度，均较第2半导体结晶层之由第2蚀刻剂所蚀刻之蚀刻速度更小。

The present invention provides a semiconductor substrate with a first semiconductor crystal layer, a second semiconductor crystal layer, and a third semiconductor crystal layer formed on a semiconductor layer forming substrate in the order, wherein the etching rate of the first semiconductor crystal layer etched by the first etchant and the etching rate of the third semiconductor crystal layer etched by the first etchant are both faster than the etching rate of the second semiconductor crystal layer etched by the first etchant, and the etching rate of the first semiconductor crystal layer etched by the second etchant and the etching rate of the third semiconductor crystal layer etched by the second etchant are both slower than the etching rate of the second semiconductor crystal layer etched by the first etchant.