本文描述光侦测器、用于制造光侦测器之方法及包括光侦测器之系统。在一具体实例中，一光侦测器包括复数个光电二极管区，其中至少一些经一光学滤光片覆盖。复数个金属层位于该等光电二极管区与该光学滤光片之间。该等金属层包括最接近于该光学滤光片之一最上金属层及最接近于该等光电二极管区之一最下金属层。一或多个层间介电层将该等金属层彼此隔开。该等金属层中之每一者包括一或多个金属部分及一或多个介电部分。最上金属层不含任何金属部分下伏于该光学滤光片。

Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical filter. The metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions. One or more inter-level dielectric layers separate the metal layers from one another. Each of the metal layers includes one or more metal portions and one or more dielectric portions. The uppermost metal layer is devoid of any metal portions underlying the optical filter.