一种制造一半导体设备之方法包括：在一布线基板之一第一电极及一半导体组件之一第二电极之至少一电极的一表面上形成一障壁金属膜；在该等第一与第二电极之间提供一连接端子，且该连接端子系由含锡、铋及锌之焊料构成；及加热该连接端子且保持该连接端子之温度在不低于该焊料之一熔点之一固定温度一段时间，借此接合该连接端子与该障壁金属膜。

A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.