用于施用导电膜至具晶种层的基板上的电化学制程包括把基板放入接触含钴或镍盐的电化学电镀浴，且电镀浴的pH为4.0至9.0。电流经引导通过浴而至基板。浴中的钴或镍离子沉积至晶种层上。电镀浴可含氯化钴和甘氨酸。电流可为1-50毫安/平方公分。完成电化学制程后，将基板移出电镀浴、润洗及干燥，接着以200℃至400℃的温度退火，以改善材料性质及减少接缝线缺陷。可多次循环进行电镀及退火制程。

An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles.