本发明系有关半导体设备及其制造方法，其目的在于提供一种适用于半导体设备的氧化物半导体。或者，本发明的另一个目的在于提供一种使用该氧化物半导体的半导体设备。揭示的半导体设备在晶体管的信道形成区域中包括以In-Ga-Zn-O为基的氧化物半导体层。在所述半导体设备中，以In-Ga-Zn-O为基的氧化物半导体层具有如下结构：在由InGaO3(ZnO)m(m>0)所表示的非晶形结构中包含由InGaO3(ZnO)m(m=1)所表示的晶粒。

It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In-Ga-Zn-O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In-Ga-Zn-O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m > 0).