描述采用一或多个非平面金氧半场效应管(MOSFET)的电压骤回静电放电(ESD)保护设备。该等ESD保护设备可进一步包括轻度掺杂延伸汲极区，其电阻可透过独立于维持于地电位之一闸极电极的控制闸而电容式控制。控制闸可为浮动或受偏压以调节ESD保护设备性能。于实施例中，复数个内核电路系以复数个非平面以MOSFET为基础的ESD保护设备而受保护，该等复数个非平面以MOSFET为基础的ESD保护设备具有横过各者而改变的控制闸电位。

Snapback ESD protection device employing one or more non-planar metal-oxide-semiconductor transistors (MOSFETs) are described. The ESD protection devices may further include lightly-doped extended drain regions, the resistances of which may be capacitively controlled through control gates independent of a gate electrode held at a ground potential. Control gates may be floated or biased to modulate ESD protection device performance. In embodiments, a plurality of core circuits are protected with a plurality of non-planar MOSFET-based ESD protection devices with control gate potentials varying across the plurality.