一种在膜沉积期间减少晶圆滑动的方法，包含在晶圆系在升降销或承载环上加以支撑的同时汞抽处理腔室，及在膜沉积期间将晶圆降低在配置成最小化晶圆滑动的支座构件上。多任务作站式处理腔室（诸如用于原子层沉积的处理腔室）可包含在具有晶圆支座之各工作站的无夹头基座，该等晶圆支座系配置成防止晶圆移动偏离中心超过400微米。为了使晶圆下方的气垫最小化，晶圆支座可在晶圆的背侧及该基座之面向晶圆的表面之间提供至少2密耳的间隙。

A method for reducing slippage of a wafer during film deposition includes pumping out a processing chamber while the wafer is supported on lift pins or a carrier ring and lowering the wafer onto support members configured to minimize wafer slippage during deposition of the film. A multi-station processing chamber, such as a processing chamber for atomic layer deposition, can include a chuck-less pedestal at each station having wafer supports configured to prevent the wafer from moving off center by more than 400 microns. To minimize a gas cushion beneath the wafer, the wafer supports can provide a gap of at least 2 mils between the back side of the wafer and the wafer-facing surface of the pedestal.