Invention Patent
- Patent Title: 相變記憶體電流
- Patent Title (English): PHASE CHANGE MEMORY CURRENT
- Patent Title (中): 相变内存电流
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Application No.: TW105111522Application Date: 2016-04-13
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Publication No.: TWI686801BPublication Date: 2020-03-01
- Inventor: 道柏 梅西J , TAUB, MASE J. , 古利安尼 山迪普K , GULIANI, SANDEEP K. , 潘加爾 基蘭 , PANGAL, KIRAN , 曾 雷蒙W , ZENG, RAYMOND W.
- Applicant: 美商英特爾公司 , INTEL CORPORATION
- Assignee: 美商英特爾公司,INTEL CORPORATION
- Current Assignee: 美商英特爾公司,INTEL CORPORATION
- Agent 惲軼群; 劉法正
- Priority: 14/725,826 20150529
- Main IPC: G11C13/00
- IPC: G11C13/00
Public/Granted literature
- TW201711036A 相變記憶體電流 Public/Granted day:2017-03-16
Information query
