Invention Grant
- Patent Title: Embedded fuse with conductor backfill
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Application No.: US15110704Application Date: 2014-02-11
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Publication No.: US10008445B2Publication Date: 2018-06-26
- Inventor: Chen-Guan Lee , Walid M. Hafez , Chia-Hong Jan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2014/015815 WO 20140211
- International Announcement: WO2015/122877 WO 20150820
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L27/06 ; H01L21/8234 ; H01L23/525 ; H01L27/112 ; H01L29/66

Abstract:
Embedded fuse structures and fabrication techniques. An embedded fuse may include a non-planar conductive line having two high-z portions extending to a greater z-height than a low-z portion of reduced current carrying capability disposed there between. A dielectric disposed over the low-z portion has a top surface planar with the high-z line portions to which fuse contacts may be landed. Fabrication of an embedded fuse may include undercutting a region of a first dielectric material disposed over a substrate. The undercut region is lined with a second dielectric material. A pair of electrically joined fuse ends are formed by backfilling the lined undercut region with a conductive material. In advantageous embodiments, fuse fabrication is compatible with high-K, metal gate transistor and precision polysilicon resistor fabrication flows.
Public/Granted literature
- US20160329282A1 EMBEDDED FUSE WITH CONDUCTOR BACKFILL Public/Granted day:2016-11-10
Information query
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