Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15729127Application Date: 2017-10-10
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Publication No.: US10008466B2Publication Date: 2018-06-26
- Inventor: Hiroyuki Utsunomiya
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-093059 20150430
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763 ; H01L23/48 ; H01L23/52 ; H01L23/00

Abstract:
A flip-chip mounting technique with high reliability is provided in flip-chip mounting using a Cu pillar. In a semiconductor device to be coupled to a mounting board via a Cu pillar, the Cu pillar is caused to have a laminated structure including a pillar layer, a barrier layer, and a bump in this order from below, and the bump is formed to be smaller than the barrier layer.
Public/Granted literature
- US20180047691A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-02-15
Information query
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