Invention Grant
- Patent Title: Methods for forming cobalt-copper selective fill for an interconnect
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Application No.: US15019587Application Date: 2016-02-09
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Publication No.: US10014179B2Publication Date: 2018-07-03
- Inventor: Rong Tao , Tae Hong Ha , Xianmin Tang , Joung Joo Lee
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L23/532
Abstract:
Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features.
Public/Granted literature
- US20160240432A1 METHODS FOR FORMING COBALT-COPPER SELECTIVE FILL FOR AN INTERCONNECT Public/Granted day:2016-08-18
Information query
IPC分类:
