公开(公告)号：US12094699B2

公开(公告)日：2024-09-17

申请号：US18237934

申请日：2023-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US12027354B2

公开(公告)日：2024-07-02

申请号：US17861421

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/32 ,  C23C14/54 ,  C23C14/56 ,  H01J37/34

CPC classification number: H01J37/3488 ,  C23C14/54 ,  C23C14/564 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/3435 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/32091

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：US11802349B2

公开(公告)日：2023-10-31

申请号：US17016614

申请日：2020-09-10

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Yong Cao ,  Shumao Zhang ,  Zhebo Chen ,  Jean Lu ,  Daniel Lee Diehl ,  Xianmin Tang

IPC: C23C14/58 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  C30B23/00 ,  C30B29/40 ,  C30B33/04

CPC classification number: C30B23/002 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/54 ,  C23C14/5833 ,  C30B29/403 ,  C30B33/04

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

公开(公告)号：US11764157B2

公开(公告)日：2023-09-19

申请号：US17383361

申请日：2021-07-22

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/5226

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220344275A1

公开(公告)日：2022-10-27

申请号：US17858274

申请日：2022-07-06

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220028795A1

公开(公告)日：2022-01-27

申请号：US17383361

申请日：2021-07-22

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220028793A1

公开(公告)日：2022-01-27

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/768

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US11056325B2

公开(公告)日：2021-07-06

申请号：US16215769

申请日：2018-12-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh X. Nguyen ,  Alexander Jansen ,  Yana Cheng ,  Randal Schmieding ,  Yong Cao ,  Xianmin Tang ,  William Johanson

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  H01J37/32

Abstract: A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.

公开(公告)号：US10950448B2

公开(公告)日：2021-03-16

申请号：US16375941

申请日：2019-04-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Xianmin Tang

IPC: H01L21/285 ,  H01L21/67

Abstract: Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.

公开(公告)号：US10718049B2

公开(公告)日：2020-07-21

申请号：US15830924

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.