- 专利标题： Semiconductor device with passivation layer for control of leakage current
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申请号： US15414156申请日： 2017-01-24
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公开(公告)号： US10014401B2公开(公告)日： 2018-07-03
- 发明人: Jeho Na , Hyung Seok Lee , Chi Hoon Jun , Sang Choon Ko , Myungjoon Kwack , Young Rak Park , Woojin Chang , Hyun-Gyu Jang , Dong Yun Jung
- 申请人： Electronics and Telecommunications Research Institute
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 代理机构： Rabin & Berdo, P.C.
- 优先权： KR10-2016-0008938 20160125; KR10-2016-0101508 20160809
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L23/31 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/66
摘要：
A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.
公开/授权文献
- US20170213904A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2017-07-27
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