Invention Grant
- Patent Title: Method of manufacturing light emitting element
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Application No.: US14979990Application Date: 2015-12-28
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Publication No.: US10026879B2Publication Date: 2018-07-17
- Inventor: Masahiko Onishi , Yasuhiro Miki
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2014-266065 20141226
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/56 ; H01L33/44 ; H01L33/58

Abstract:
A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode.
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