公开(公告)号：US09608167B2

公开(公告)日：2017-03-28

申请号：US14338546

申请日：2014-07-23

Applicant: NICHIA CORPORATION

Inventor： Yasuhiro Miki

IPC: H01L33/40 ,  H01L33/62 ,  H01S5/042 ,  H01S5/022

CPC classification number: H01L33/40 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2924/00011 ,  H01L2924/181 ,  H01S5/02276 ,  H01S5/0425 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/01004 ,  H01L2924/01005

Abstract: A light emitting device uses an Ag wire and exhibits excellent light extraction efficiency. In the light emitting device, a pad electrode of a light emitting element and a mount electrode are connected to each other using an Ag wire. The pad electrode contains Pt in a region where the Ag wire is bonded.

公开(公告)号：US08878224B2

公开(公告)日：2014-11-04

申请号：US13627310

申请日：2012-09-26

Applicant: Nichia Corporation

Inventor： Takashi Ichihara ,  Yasuhiro Miki

IPC: H01L29/22 ,  H01L29/43 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L29/43 ,  H01L33/38 ,  H01L33/42

Abstract: There is provided a semiconductor element including a semiconductor layer, a translucent electrode which is formed on the semiconductor layer, and a pad electrode which is formed on the translucent electrode, wherein the translucent electrode includes a recessed part on which the pad electrode is mounted, and wherein a thickness of a bottom surface of the recessed part of the translucent electrode is more than 0% of and equal to or less than 70% of a thickness of a part of the translucent electrode other than the recessed part.

Abstract translation: 提供了一种半导体元件，包括半导体层，形成在半导体层上的透光性电极和形成在透光性电极上的焊盘电极，其中，所述透光性电极包括其上安装有焊盘电极的凹部， 并且其中，所述透光性电极的所述凹部的底面的厚度比所述凹部以外的所述透光性电极的一部分的厚度的0％以下且在70％以下。

公开(公告)号：US11271146B2

公开(公告)日：2022-03-08

申请号：US17115082

申请日：2020-12-08

Applicant: NICHIA CORPORATION

Inventor： Yasuhiro Miki ,  Koichi Takenaga

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/36

Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at the outer peripheral region of the n-side semiconductor layer.

公开(公告)号：US11024770B2

公开(公告)日：2021-06-01

申请号：US16123274

申请日：2018-09-06

Applicant: NICHIA CORPORATION

Inventor： Satoshi Shichijo ,  Hiroki Fukuta ,  Kunihito Sugimoto ,  Yasuhiro Miki ,  Koichi Takenaga

IPC: H01L33/38 ,  H01L23/532 ,  H01L33/10 ,  H01L33/62 ,  H01L33/40 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54 ,  H01L33/44

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection parts. The first semiconductor layer is exposed from the light emitting layer and the second semiconductor layer at exposed portions arranged in columns each extending in a first direction. The insulating film defines openings respectively located above the exposed portions. The first electrode is connected to the first semiconductor layer through the openings and covers a part of the second semiconductor layer via the insulating film. The first external connection part is connected to the first electrode and spaced apart from the exposed portions in the plan view. The first external connection part has a shape elongated in the first direction between adjacent ones of the columns of the exposed portions. The second external connection part is connected to the second semiconductor layer via the second electrode.

公开(公告)号：US10026879B2

公开(公告)日：2018-07-17

申请号：US14979990

申请日：2015-12-28

Applicant: NICHIA CORPORATION

Inventor： Masahiko Onishi ,  Yasuhiro Miki

IPC: H01L33/00 ,  H01L33/56 ,  H01L33/44 ,  H01L33/58

Abstract: A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode.

公开(公告)号：US10903407B2

公开(公告)日：2021-01-26

申请号：US16526895

申请日：2019-07-30

Applicant: Nichia Corporation

Inventor： Yasuhiro Miki ,  Koichi Takenaga

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/36

Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

公开(公告)号：US20160190394A1

公开(公告)日：2016-06-30

申请号：US14979990

申请日：2015-12-28

Applicant: NICHIA CORPORATION

Inventor： Masahiko Onishi ,  Yasuhiro Miki

IPC: H01L33/42 ,  H01L33/56 ,  H01L33/44 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/56 ,  H01L33/44 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode.

Abstract translation: 发光元件包括具有上表面的n型半导体层; 在n型半导体层的上表面的一部分上的p型半导体层，p型半导体层具有上表面; 连续地覆盖n型半导体层和p型半导体层的保护膜，在n型半导体层的上表面形成n侧开口的保护膜和在n型半导体层的上表面的p侧开口 p型半导体层; 在p侧开口露出的p型半导体层的上表面上的p侧电极; 在n侧开口处露出的n型半导体层的上表面上的n侧电极，具有n侧透光电极的n侧电极; 以及在n侧透光电极的上表面上的n侧焊盘电极。