Invention Grant
- Patent Title: Source/drain performance through conformal solid state doping
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Application No.: US15144481Application Date: 2016-05-02
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Publication No.: US10032628B2Publication Date: 2018-07-24
- Inventor: Qi Xie , David de Roest , Jacob Woodruff , Michael Eugene Givens , Jan Willem Maes , Timothee Blanquart
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/265 ; H01L29/36 ; H01L29/417
Abstract:
A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.
Public/Granted literature
- US20170316933A1 SOURCE/DRAIN PERFORMANCE THROUGH CONFORMAL SOLID STATE DOPING Public/Granted day:2017-11-02
Information query
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