公开(公告)号：US20220208542A1

公开(公告)日：2022-06-30

申请号：US17470177

申请日：2021-09-09

申请人： ASM IP HOLDING B.V.

发明人： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie

IPC分类号： H01L21/02 ,  H01L21/324 ,  H01L21/67

摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

申请人： ASM IP Holding B.V.

发明人： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC分类号： H01L21/033 ,  H01L21/027

摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20200325573A1

公开(公告)日：2020-10-15

申请号：US16836151

申请日：2020-03-31

申请人： ASM IP Holding B.V.

发明人： Andrea Illiberi ,  Michael Eugene Givens ,  Shaoren Deng ,  Giuseppe Alessio Verni

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/455

摘要： Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.

公开(公告)号：US20200266055A1

公开(公告)日：2020-08-20

申请号：US16790780

申请日：2020-02-14

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/51

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US10367080B2

公开(公告)日：2019-07-30

申请号：US15144506

申请日：2016-05-02

申请人： ASM IP Holding B.V.

发明人： Fu Tang ,  Qi Xie ,  Jan Willem Maes ,  Xiaoqiang Jiang ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/66

摘要： A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

公开(公告)号：US20190088555A1

公开(公告)日：2019-03-21

申请号：US15707786

申请日：2017-09-18

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC分类号： H01L21/8238 ,  H01L29/49 ,  H01L27/092 ,  H01L29/51

摘要： A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US10032628B2

公开(公告)日：2018-07-24

申请号：US15144481

申请日：2016-05-02

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L29/36 ,  H01L29/417

CPC分类号： H01L21/0262 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02694 ,  H01L21/2254 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/41725

摘要： A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US09981286B2

公开(公告)日：2018-05-29

申请号：US15064404

申请日：2016-03-08

申请人： ASM IP HOLDING B.V.

发明人： Jacob Huffman Woodruff ,  Michael Eugene Givens ,  Bed Sharma ,  Petri Räisänen

IPC分类号： C23C16/42 ,  B05D1/00

CPC分类号： B05D1/60 ,  B05D2203/30 ,  C23C16/04 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/285

摘要： Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20220367647A1

公开(公告)日：2022-11-17

申请号：US17873885

申请日：2022-07-26

申请人： ASM IP Holding B.V.

发明人： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC分类号： H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

摘要： Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20220139702A1

公开(公告)日：2022-05-05

申请号：US17577073

申请日：2022-01-17

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01L21/28

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.