- 专利标题: Power semiconductor element driving circuit
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申请号: US15303149申请日: 2015-05-27
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公开(公告)号: US10038438B2公开(公告)日: 2018-07-31
- 发明人: Kosuke Nakano , Keisuke Iwasawa , Takayoshi Miki , Hiroshi Nakatake
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Chiyoda-ku
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2014-112004 20140530
- 国际申请: PCT/JP2015/065257 WO 20150527
- 国际公布: WO2015/182658 WO 20151203
- 主分类号: H03B1/00
- IPC分类号: H03B1/00 ; H03K3/00 ; H03K17/567 ; H02M1/00 ; H02M1/08 ; H02M7/48 ; H01L29/16 ; H01L29/20 ; H03K17/0812 ; H02M1/32 ; H02M7/5387
摘要:
A driving circuit including: a voltage detector that detects the sum voltage of a positive bias voltage and a negative bias voltage, the negative bias voltage or the positive bias voltage; and a switching element that is connected to the control terminal of a power element and the negative side of a negative-voltage power supply; wherein, when the value of the detection target voltage becomes lower than a voltage setting value or when a voltage between the control terminal and the reference terminal in the power element increases in a state where the value of the detection target voltage is lower than the voltage setting value, the voltage detector turns on the switching element to thereby supply, between the above terminals in the power element, a voltage of 0V or lower.
公开/授权文献
- US20170040992A1 POWER-SEMICONDUCTOR ELEMENT DRIVING CIRCUIT 公开/授权日:2017-02-09
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