Invention Grant
- Patent Title: Semiconductor device with insulation layers
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Application No.: US15221375Application Date: 2016-07-27
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Publication No.: US10043771B2Publication Date: 2018-08-07
- Inventor: Kenji Fujii , Mamoru Yamagami
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2015-155187 20150805
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L21/48 ; H01L23/495

Abstract:
A semiconductor device includes a semiconductor chip, a terminal layer, an insulation layer with an opening, a protection layer with an opening, an inner conductive member, an outer conductive member, and a conductive bonding member. The insulation layer includes a first insulation layer, and a second insulation layer opposite to the functional surface of the chip with respect to the first insulation layer. The second insulation layer includes a shield portion overlapping with the terminal layer in plan view, and a retracted portion not overlapping with the terminal layer in plan view. A back surface of the retracted portion of the second insulation layer is more distant from the functional surface in a z-direction than is the main surface of the terminal layer that is opposite to the functional surface.
Public/Granted literature
- US20170040243A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-09
Information query
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