ELECTRONIC APPARATUS
    1.
    发明申请

    公开(公告)号:US20230080548A1

    公开(公告)日:2023-03-16

    申请号:US17931256

    申请日:2022-09-12

    Applicant: ROHM Co., LTD.

    Abstract: Provided is an electronic apparatus including an electronic part, a resin member that covers the electronic part, and a plurality of leads each electrically connected to the electronic part, the resin member including a first resin side surface facing one side in a first direction orthogonal to a thickness direction of the resin member, the plurality of leads including a plurality of first side exposed portions arranged along the first resin side surface, each of the plurality of first side exposed portions being exposed from the first resin side surface, each of the plurality of first side exposed portions including a first tapered portion becoming narrower toward the first resin side surface as viewed in the thickness direction, the first tapered portion including a first front surface that faces the same direction as the first resin side surface in the first direction and is flush with the first resin side surface.

    Semiconductor device
    5.
    发明授权

    公开(公告)号:US10163850B2

    公开(公告)日:2018-12-25

    申请号:US15707632

    申请日:2017-09-18

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

    Semiconductor device
    8.
    发明授权

    公开(公告)号:US10177134B2

    公开(公告)日:2019-01-08

    申请号:US15906313

    申请日:2018-02-27

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device according to the present invention includes: a substrate; a plurality of trenches formed in the substrate; and a plurality of functional element forming regions arrayed along each of the trenches, including a channel forming region as a current path, wherein the plurality of functional element forming regions includes a first functional element forming region in which the area of the channel forming region per unit area is relatively small and a second functional element forming region in which the area of the channel forming region per unit area is relatively large, and the first functional element forming region is provided at a region where heat generation should be suppressed.

    Semiconductor device
    9.
    发明授权

    公开(公告)号:US10109611B2

    公开(公告)日:2018-10-23

    申请号:US15792398

    申请日:2017-10-24

    Applicant: ROHM CO., LTD.

    Abstract: An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip.

    Semiconductor device with insulation layers

    公开(公告)号:US10043771B2

    公开(公告)日:2018-08-07

    申请号:US15221375

    申请日:2016-07-27

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes a semiconductor chip, a terminal layer, an insulation layer with an opening, a protection layer with an opening, an inner conductive member, an outer conductive member, and a conductive bonding member. The insulation layer includes a first insulation layer, and a second insulation layer opposite to the functional surface of the chip with respect to the first insulation layer. The second insulation layer includes a shield portion overlapping with the terminal layer in plan view, and a retracted portion not overlapping with the terminal layer in plan view. A back surface of the retracted portion of the second insulation layer is more distant from the functional surface in a z-direction than is the main surface of the terminal layer that is opposite to the functional surface.

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