Invention Grant
- Patent Title: Vertically stacked nanowire field effect transistors
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Application No.: US15097142Application Date: 2016-04-12
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Publication No.: US10043796B2Publication Date: 2018-08-07
- Inventor: Vladimir Machkaoutsan , Stanley Seungchul Song , Mustafa Badaroglu , John Jianhong Zhu , Junjing Bao , Jeffrey Junhao Xu , Da Yang , Matthew Michael Nowak , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Tol
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L27/02 ; H01L21/8234 ; H01L21/8238 ; H01L29/423 ; H01L27/06
Abstract:
A device includes a substrate, a first nanowire field effect transistor (FET), and a second nanowire FET positioned between the substrate and the first nanowire FET. The device also includes a first nanowire electrically coupled to the first nanowire FET and to the second nanowire FET.
Public/Granted literature
- US20170221884A1 VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS Public/Granted day:2017-08-03
Information query
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